BAS28 All information provided in this document is subject to legal disclaimers. ? NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 3 — 22 July 2010 3 of 12
NXP Semiconductors
BAS28
High-speed double diode
5. Limiting values
[1] Device mounted on an FR4 PCB.
[2] One diode loaded.
[3] Tj
=25°C prior to surge.
6. Thermal characteristics
[1] Device mounted on an FR4 PCB.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per diode
VRRM
repetitive peak
reverse voltage
-85V
VR
reverse voltage - 75 V
IF
forward current
[1]
-215mA
IFRM
repetitive peak
forward current
-500mA
IFSM
non-repetitive peak
forward current
square wave
[3]
tp
=1μs-4A
tp
=1ms - 1 A
tp
=1s - 0.5 A
Per device
Ptot
total power dissipation Tamb
=25°C
[1][2]
-250mW
Tj
junction temperature - 150
°C
Tstg
storage temperature
?65 +150
°C
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per device; one diode loaded
Rth(j-a)
thermal resistance from
junction to ambient
in free air
[1]
- - 500 K/W
Rth(j-t)
thermal resistance from
junction to tie-point
- - 360 K/W
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